? auirf5210s v dss -100v r ds(on) max. 60m ?? i d -38a description specifically designed for automoti ve applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achiev e low on-resistan ce per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.. features ? advanced process technology ? p-channel mosfet ? ultra low on-resistance ? dynamic dv/dt rating ? fast switching ? fully avalanche rated ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * 1 2015-9-30 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? automotive grade symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ -10v -38 a i d @ t c = 100c continuous drain current, v gs @ -10v -24 i dm pulsed drain current ? -140 p d @t a = 25c maximum power dissipation 3.1 w p d @t c = 25c maximum power dissipation 170 linear derating factor 1.3 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ? 120 mj i ar avalanche current ? -23 a e ar repetitive avalanche energy ? 17 mj t j operating junction and -55 to + 150 ? t stg storage temperature range c ? soldering temperature, for 10 seconds (1.6mm from case) 300 ? dv/dt peak diode recovery dv./dt ? -7.4 v/ns absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond thos e indicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for exte nded periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (ta) is 25c, unle ss otherwise specified. thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ? ??? 0.75 c/w r ? ja junction-to-ambient ( pcb mount, steady state) ? 40 d 2 pak auirf5210s s d g base part number package type standard pack orderable part number form quantity auirf5210s d 2 -pak tube 50 auirf5210s tape and reel left 800 AUIRF5210STRL g d s gate drain source
? auirf5210s 2 2015-9-30 notes: ? ? repetitive rati ng; pulse width limited by max. junction temperature. (see fig. 11) ? limited by t jmax , starting t j = 25c, l = 0.46mh, r g = 25 ? , i as = -23a.(see fig.12) ?? i sd ?? -23a, di/dt ?? -650a/s, v dd ?? v (br)dss , t j ? 150c. ? pulse width ?? 300s; duty cycle ? 2%. ? this is applied to d 2 pak when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 ? r ? is measured at t j of approximately 90c. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -100 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.11 ??? v/c reference to 25c, i d = -1ma r ds(on) static drain-to-source on-resistance ??? ??? 60 m ??? v gs = -10v, i d = -38a ? v gs(th) gate threshold voltage -2.0 ??? -4.0 v v ds = v gs , i d = -250a gfs forward trans conductance 9.5 ??? ??? s v ds = -50v, i d = -23a i dss drain-to-source leakage current ??? ??? -50 a v ds = -100v, v gs = 0v ??? ??? -250 v ds = -80v,v gs = 0v,t j =125c i gss gate-to-source forwar d leakage ??? ??? -100 na v gs = -20v gate-to-source reverse leakage ??? ??? 100 v gs = 20v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? 150 230 nc ? i d = -23a q gs gate-to-source charge ??? 22 33 v ds = -80v q gd gate-to-drain charge ??? 81 120 v gs = -10v ? t d(on) turn-on delay time ??? 14 ??? ns v dd = -50v t r rise time ??? 63 ??? i d = -23a t d(off) turn-off delay time ??? 72 ??? r g = 2.4 ?? t f fall time ??? 55 ??? v gs = -10v ? l d internal drain inductance ??? 4.5 ??? nh ? between lead, 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 2780 ??? v gs = 0v c oss output capacitance ??? 800 ??? v ds = -25v c rss reverse transfer capacitance ??? 430 ??? ? = 1.0mhz, see fig. 5 diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? -38 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? -140 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? -1.6 v t j = 25c,i s = -23a,v gs = 0v ?? t rr reverse recovery time ??? 170 260 ns t j = 25c ,i f = -23a, v dd = -25v q rr reverse recovery charge ??? 1180 1770 nc di/dt = -100a/s ??? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) pf ?
? auirf5210s 3 2015-9-30 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v ? 60s pulse width tj = 25c -4.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -4.5v ? 60s pulse width tj = 150c vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v 2 4 6 8 10 12 14 -v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -50v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -38a v gs = -10v
? auirf5210s 4 2015-9-30 fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage ? fig 8. maximum safe operating area fig. 7 typical source-to-drain diode forward voltage 1 10 100 -v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 25 50 75 100 125 150 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -80v v ds = -50v v ds = -20v i d = -23a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 1000 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec
? auirf5210s 5 2015-9-30 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 30 35 40 - i d , d r a i n c u r r e n t ( a ) fig 10a. switching time test circuit fig 10b. switching time waveforms 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ? c ? c ci= ? i ? ri ci= ? i ? ri ri (c/w) ? i (sec) ? 0.128309 0.000069 0.244513 0.010024 0.377663 0.001772
? auirf5210s 6 2015-9-30 ? fig 13. maximum avalanche energy vs. drain current fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms fig 14b. gate charge test circuit fig 14a. gate charge waveform 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 400 450 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -8.7a -14a bottom - 23a
? auirf5210s 7 2015-9-30 ? fig 15. peak diode recovery dv/dt test circuit for p-channel hexfet? power mosfets
? auirf5210s 8 2015-9-30 d 2 pak (to-263ab) package outline (dimensions are shown in millimeters (inches)) ywwa xx ? xx date code y= year ww= work week auf5210s lot code part number ir logo d 2 pak (to-263ab) part marking information
? auirf5210s 9 2015-9-30 d 2 pak (to-263ab) tape & reel information (dimensions are shown in millimeters (inches)) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
? auirf5210s 10 2015-9-30 ? qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level ? d 2 -pak msl1 esd machine model class m4 (+/-425v) ? aec-q101-002 human body model ? class h2 ( /-4000v) ? aec-q101-001 charged device model class c5 ( /-1125v) ? aec-q101-005 rohs compliant yes published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 9/30/2015 ?? updated datasheet with corporate template ?? corrected ordering table on page 1. ? highest passing voltage.
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